Title :
Optimum Au/WSi 0.3 μm-gate-length n-HIGFETs for microwave power applications in X band
Author :
Touirat, M. ; Roger, M. ; Pesant, J.C. ; Ajram, S. ; Crosnier, Y. ; Salmer, G.
Author_Institution :
Inst. d´Electron. et de Microelectron. du Nord, CNRS, Villeneuve d´Ascq, France
fDate :
4/1/2001 12:00:00 AM
Abstract :
An investigation of pseudomorphic Ga/sub 0.25/Al/sub 0.75/As/Ga/sub 0.80/In/sub 0.20/As/GaAs heterostructure insulated-gate FETs (HIGFET) far microwave power applications is presented. Devices have been fabricated using Au/WSi self-aligned gate technology with SiO2 sidewalls. The fabrication process has been optimized in order to realize 0.3 μm gate-length transistors with reduced short-channel effects and improved rf power performance. dc and rf extracted parameters suggest very attractive capabilities: for N-type HIGFET, a current density of 460 mA/mm and an extrinsic transconductance of 480 mS/mm are obtained. Measurements at 10 GHz using a load-pull power setup have been carried out: 300 mW/mm maximum output power, 14 dB linear gain, and 65% PAE, for low Vds (3 V) value. To our knowledge, these power results are the first reported for 0.3 μm-HIGFFTs.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; gold; indium compounds; insulated gate field effect transistors; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device measurement; semiconductor device metallisation; tungsten compounds; 0.3 mum; 10 GHz; 14 dB; 3 V; 480 mS/mm; 65 percent; Au-WSi; Au/WSi self-aligned gate technology; Ga/sub 0.25/Al/sub 0.75/As-Ga/sub 0.80/In/sub 0.20/As-GaAs; GaAlAs/GaInAs/GaAs HIGFET; N-type HIGFET; PAE; SiO/sub 2/; SiO/sub 2/ sidewalls; X band; current density; dc parameters; extrinsic transconductance; fabrication process optimization; gate-length; linear gain; load-pull power setup; maximum output power; microwave power applications; pseudomorphic heterostructure insulated-gate FETs; rf parameters; rf power performance; short-channel effects; Current density; Fabrication; Gallium arsenide; Gold; Insulation; Microwave FETs; Microwave devices; Microwave transistors; Power measurement; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
