Title :
Short-channel amorphous-silicon thin-film transistors
Author :
Kim, Chang-Dong ; Matsumura, Masakiyo
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
fDate :
12/1/1996 12:00:00 AM
Abstract :
Amorphous-silicon thin film transistors (TFTs) with submicrometer-long bottom-gate have been fabricated and their characteristics were evaluated. By the desirable effects of highly conductive source and drain of excimer-laser crystallized Si film, the mobility was hardly decreased from about 1.0 cm2/Vs for the 15-μm long TFT to about 0.9 cm2/Vs for the 0.5-μm long TFT. Detailed effects of the gate electrode thickness and length have been discussed on the TFT characteristics
Keywords :
amorphous semiconductors; carrier mobility; elemental semiconductors; laser materials processing; silicon; thin film transistors; 0.5 micron; 1.5 micron; Si; excimer-laser crystallized Si film; mobility; short-channel amorphous-silicon thin-film transistor; submicrometer bottom gate electrode; Capacitance; Chromium; Conductive films; Conductivity; Crystallization; Electrodes; Electrons; Semiconductor films; Silicon; Thin film transistors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
