• DocumentCode
    1464687
  • Title

    Short-channel amorphous-silicon thin-film transistors

  • Author

    Kim, Chang-Dong ; Matsumura, Masakiyo

  • Author_Institution
    Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
  • Volume
    43
  • Issue
    12
  • fYear
    1996
  • fDate
    12/1/1996 12:00:00 AM
  • Firstpage
    2172
  • Lastpage
    2176
  • Abstract
    Amorphous-silicon thin film transistors (TFTs) with submicrometer-long bottom-gate have been fabricated and their characteristics were evaluated. By the desirable effects of highly conductive source and drain of excimer-laser crystallized Si film, the mobility was hardly decreased from about 1.0 cm2/Vs for the 15-μm long TFT to about 0.9 cm2/Vs for the 0.5-μm long TFT. Detailed effects of the gate electrode thickness and length have been discussed on the TFT characteristics
  • Keywords
    amorphous semiconductors; carrier mobility; elemental semiconductors; laser materials processing; silicon; thin film transistors; 0.5 micron; 1.5 micron; Si; excimer-laser crystallized Si film; mobility; short-channel amorphous-silicon thin-film transistor; submicrometer bottom gate electrode; Capacitance; Chromium; Conductive films; Conductivity; Crystallization; Electrodes; Electrons; Semiconductor films; Silicon; Thin film transistors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.544388
  • Filename
    544388
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1464687