Title :
Direct extraction of HBT equivalent-circuit elements
Author :
Rudolph, M. ; Doerner, R. ; Heymann, P.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
fDate :
1/1/1999 12:00:00 AM
Abstract :
We present an analytical method for determining the heterojunction bipolar transistors (HBT´s) equivalent-circuit elements. Its special feature is that it does not need measurements of test structures nor optimizations. The new algorithm for extracting the intrinsic elements exploits the information contained in the frequency dependence of the network parameters. This leads to a fast algorithm with a unique solution. The method is validated treating GaInP-GaAs HBT´s
Keywords :
equivalent circuits; heterojunction bipolar transistors; microwave bipolar transistors; network parameters; semiconductor device models; GaInP-GaAs; HBT equivalent circuit elements; analytical method; direct extraction; fast algorithm; frequency dependence; heterojunction bipolar transistor; network parameters; Capacitance; Equivalent circuits; FETs; Feedback; Frequency dependence; Frequency estimation; Gallium arsenide; Heterojunction bipolar transistors; Parameter extraction; Silicon germanium;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
