Direct extraction of HBT equivalent-circuit elements

Author

Rudolph, M. ; Doerner, R. ; Heymann, P.

Author_Institution

Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany

Volume

47

Issue

1

fYear

1999

fDate

1/1/1999 12:00:00 AM

Firstpage

82

Lastpage

84

Abstract

We present an analytical method for determining the heterojunction bipolar transistors (HBT´s) equivalent-circuit elements. Its special feature is that it does not need measurements of test structures nor optimizations. The new algorithm for extracting the intrinsic elements exploits the information contained in the frequency dependence of the network parameters. This leads to a fast algorithm with a unique solution. The method is validated treating GaInP-GaAs HBT´s

Keywords

equivalent circuits; heterojunction bipolar transistors; microwave bipolar transistors; network parameters; semiconductor device models; GaInP-GaAs; HBT equivalent circuit elements; analytical method; direct extraction; fast algorithm; frequency dependence; heterojunction bipolar transistor; network parameters; Capacitance; Equivalent circuits; FETs; Feedback; Frequency dependence; Frequency estimation; Gallium arsenide; Heterojunction bipolar transistors; Parameter extraction; Silicon germanium;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.740081

Filename

740081