Title :
Analysis of conductivity degradation in gold/platinum-doped silicon
Author :
Valdinoci, Marina ; Colalongo, Luigi ; Pellegrini, Aurelio ; Rudan, Massimo
Author_Institution :
Dipartimento di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy
fDate :
12/1/1996 12:00:00 AM
Abstract :
A general model is presented, describing the effects of gold/platinum doping in silicon. The steady-state case is then analyzed with reference to the conductivity degradation due to deep impurities in realistic cases of n- and p-type materials. In particular, the different influence of gold with respect to platinum in n-type material, due to the localization in energy of the two acceptor levels, is quantitatively explained and reproduced
Keywords :
deep levels; electrical conductivity; elemental semiconductors; gold; impurity states; platinum; semiconductor doping; silicon; Si:Au; Si:Pt; acceptor level; conductivity degradation; deep impurity; doped silicon; energy localization; model; n-type material; p-type material; Conducting materials; Conductivity; Degradation; Doping; Gold; Impurities; Platinum; Semiconductor process modeling; Silicon; Steady-state;
Journal_Title :
Electron Devices, IEEE Transactions on
