DocumentCode
1464923
Title
Optimization of power diode characteristics by means of ion irradiation
Author
Vobecký, Jan ; Hazdra, Pavel ; Homola, Jaroslav
Author_Institution
Fac. of Electr. Eng., Czech Tech. Univ., Prague, Czech Republic
Volume
43
Issue
12
fYear
1996
fDate
12/1/1996 12:00:00 AM
Firstpage
2283
Lastpage
2289
Abstract
The static and dynamic parameters of a bipolar power diode are optimized by the use of helium irradiation. The optimal position for the defect peak caused by the irradiation was found in the n-base very close to the anode junction. This was verified by both the simulation and the experiment
Keywords
helium; ion beam effects; optimisation; power semiconductor diodes; He; He irradiation; bipolar power diode; characteristics optimisation; dynamic parameters; ion irradiation; power diode characteristics; static parameters; Anodes; Diodes; Helium; Microelectronics; Nuclear power generation; Protons; Shape; Tail; Thyristors; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.544422
Filename
544422
Link To Document