Title :
The optoelectronic response of a laterally contacted 2-D MESFET
Author :
Tsai, R. ; Schuermeyer, F. ; Peatman, W.C.B. ; Shur, M.
Author_Institution :
Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
fDate :
12/1/1996 12:00:00 AM
Abstract :
We describe the photoelectric response of a Two-Dimensional Metal Semiconductor-Field-Effect-Transistor (2-D MESFET) which utilizes laterally contacting gates to the active region. The use of lateral gates allows direct illumination of the conductive channel from the top. Photogains as high as 2.4×107 have been measured at 0.7 μm wavelength and 26 μW/cm2 optical power intensity. Broad spectral responses from 0.7 μm to 1.06 μm are also presented. The new feature of this device is a spectral response which can be tuned by the applied gate bias and also a higher responsivity which is related to the top illumination unimpeded by the top gate
Keywords :
Schottky gate field effect transistors; phototransistors; 0.7 to 1.06 micron; 2D MESFET; lateral gate contact; optoelectronic response; photogain; responsivity; spectral response; FETs; Geometry; Lighting; Limiting; MESFETs; Molecular beam epitaxial growth; Power measurement; Shadow mapping; Substrates; Two dimensional displays; Wavelength measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
