Title :
TiW/Cu/TiW interconnection lines patterned by IR-assisted RIE
Author :
Furuya, Akira ; Hosoi, Nobuki ; Koyama, Kazuhisa ; Ohshita, Yoshio ; Numasawa, Youichirou
Author_Institution :
Microelectron. Res. Labs., NEC Corp., Sagamihara, Japan
fDate :
12/1/1996 12:00:00 AM
Abstract :
This paper presents a new Cu-metallization technology which consists of TiW/Cu/TiW film structure formation and the followed IR-assisted RIE. It is demonstrated that line structure Cu lines, which have low electrical resistivity and high EM resistance, are obtained without peeling. Further, MOS diodes and MOSFETs using these lines have fine characteristics and they are stable up to 700°C annealing
Keywords :
copper; metallisation; sputter etching; titanium alloys; tungsten alloys; 700 C; IR-assisted RIE; MOS diode; MOSFET; TiW-Cu-TiW; TiW/Cu/TiW interconnection line; annealing; electrical resistivity; electromigration; film patterning; metallization; Adhesives; Annealing; Copper; Diodes; Electric resistance; Electric variables measurement; MOSFETs; Nonhomogeneous media; Sputter etching; Substrates; Thermal stresses;
Journal_Title :
Electron Devices, IEEE Transactions on
