DocumentCode
1464943
Title
TiW/Cu/TiW interconnection lines patterned by IR-assisted RIE
Author
Furuya, Akira ; Hosoi, Nobuki ; Koyama, Kazuhisa ; Ohshita, Yoshio ; Numasawa, Youichirou
Author_Institution
Microelectron. Res. Labs., NEC Corp., Sagamihara, Japan
Volume
43
Issue
12
fYear
1996
fDate
12/1/1996 12:00:00 AM
Firstpage
2302
Lastpage
2303
Abstract
This paper presents a new Cu-metallization technology which consists of TiW/Cu/TiW film structure formation and the followed IR-assisted RIE. It is demonstrated that line structure Cu lines, which have low electrical resistivity and high EM resistance, are obtained without peeling. Further, MOS diodes and MOSFETs using these lines have fine characteristics and they are stable up to 700°C annealing
Keywords
copper; metallisation; sputter etching; titanium alloys; tungsten alloys; 700 C; IR-assisted RIE; MOS diode; MOSFET; TiW-Cu-TiW; TiW/Cu/TiW interconnection line; annealing; electrical resistivity; electromigration; film patterning; metallization; Adhesives; Annealing; Copper; Diodes; Electric resistance; Electric variables measurement; MOSFETs; Nonhomogeneous media; Sputter etching; Substrates; Thermal stresses;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.544425
Filename
544425
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