Title :
A 300-GHz Fundamental Oscillator in 65-nm CMOS Technology
Author_Institution :
Electr. Eng. Dept., Univ. of California, Los Angeles, CA, USA
fDate :
4/1/2011 12:00:00 AM
Abstract :
Fundamental oscillators prove the existence of gain at high frequencies, revealing the speed limitations of other circuits in a given technology. This paper presents an oscillator topology that employs feedback from an output stage to the core, thus achieving a high speed. The behavior of the proposed oscillator is formulated and simulations are used to compare it with the conventional cross-coupled pair circuit. Three prototypes realized in 65-nm CMOS technology operate at 205 GHz, 240 GHz, and 300 GHz, each drawing 3.7 mW from a 0.8-V supply.
Keywords :
CMOS analogue integrated circuits; MMIC oscillators; network topology; CMOS technology; conventional cross-coupled pair circuit; frequency 205 GHz; frequency 240 GHz; frequency 300 GHz; fundamental oscillator; oscillator topology; power 3.7 mW; size 65 nm; voltage 0.8 V; Capacitance; Inductors; Integrated circuit modeling; Logic gates; Oscillators; Resistance; Transistors; Carrier generation; VCOs; frequency generation; frequency synthesis; microwave oscillators; millimeter-wave oscillators; spiral inductors; transmission lines;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2011.2108122