DocumentCode
1465017
Title
Spectroscopic Response of CZT Detectors Obtained by the Boron Oxide Encapsulated Vertical Bridgman Method
Author
Auricchio, N. ; Marchini, L. ; Caroli, E. ; Cola, A. ; Farella, I. ; Donati, A. ; Zappettini, A.
Author_Institution
INAF/IASF-Bologna, Bologna, Italy
Volume
58
Issue
2
fYear
2011
fDate
4/1/2011 12:00:00 AM
Firstpage
552
Lastpage
558
Abstract
Great efforts are being presently devoted to the development of CdTe and CdZnTe detectors for a large variety of applications, such as the basic, medical, industrial, and space research. The purpose of this work is to present the spectroscopic proper ties of some CZT crystals grown by the boron oxide encapsulated vertical Bridgman method, which has been recently implemented at IMEM-CNR. By this technique the crystal, during the growth, is fully encapsulated by a thin layer of liquid boron oxide, so that the crystal-crucible contact is prevented, thus allowing larger single grains with lower dislocation density to be obtained. Several detectors were realized about 4 mm x 4 mm x 1 mm in size, with two planar gold contacts on both the surfaces realized by an electroless technique. The behavior of these detectors was studied as a function of the bias voltage, irradiation geometry and energy of the interacting photons. Good electron charge collection properties have been demonstrated and electric field distribution has been investigated using the Pockels effect.
Keywords
X-ray spectroscopy; boron compounds; crystal growth from melt; encapsulation; semiconductor counters; CZT crystals; CZT detectors; CdZnTe detectors; IMEM-CNR; Pockels effect; bias voltage; boron oxide; crystals growth; electric field distribution; electroless technique; irradiation geometry; lower dislocation density; photon interaction; semiconductor material; vertical Bridgman Method; Boron; Crystals; Detectors; Energy resolution; Geometry; Photonics; CdZnTe detectors; gamma-ray spectroscopy; mobility-lifetime product;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2010.2103324
Filename
5723780
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