DocumentCode :
1465037
Title :
Stability of IZO and a-Si:H TFTs Processed at Low Temperature (200 
)
Author :
Kaftanoglu, Korhan ; Venugopal, Sameer M. ; Marrs, Michael ; Dey, Aritra ; Bawolek, Edward J. ; Allee, David R. ; Loy, Doug
Author_Institution :
Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA
Volume :
7
Issue :
6
fYear :
2011
fDate :
6/1/2011 12:00:00 AM
Firstpage :
339
Lastpage :
343
Abstract :
Mixed-oxide thin-film transistors (TFTs) have been extensively researched due to their improved stability under electrical bias stress compared to amorphous-silicon TFTs. However, there are many challenges before they can reach the manufacturing stage. At the Flexible Display Center (FDC), Arizona State University, Tempe, we are developing a low temperature indium-zinc-oxide (IZO) TFT process suitable for flexible substrates such as polyethylene naphthalate (PEN). We report the effect of bias stress on the performance of these IZO TFTs and compare it with a-Si:H TFTs. We also report the design and fabrication of a 3.8-in QVGA electrophoretic display on PEN substrate using IZO TFT backplane.
Keywords :
electrophoretic displays; indium compounds; silicon; thin film transistors; zinc compounds; Arizona State University; Flexible Display Center; IZO stability; InZnO; QVGA electrophoretic display; Si:H; Tempe; a-Si:H TFT; amorphous-silicon TFT; electrical bias stress; flexible substrates; indium-zinc-oxide; low temperature; mixed-oxide thin-film transistors; polyethylene naphthalate; size 3.8 in; temperature 200 degC; Backplanes; Logic gates; Stress; Substrates; Thermal stability; Thin film transistors; Electrophoretic; flexible display; indium –zinc–oxide thin-film transistor (IZO TFT); polyethylene naphthalate (PEN); transparent circuits;
fLanguage :
English
Journal_Title :
Display Technology, Journal of
Publisher :
ieee
ISSN :
1551-319X
Type :
jour
DOI :
10.1109/JDT.2011.2107879
Filename :
5723783
Link To Document :
