Title :
“Gated-diode” in SOI MOSFETs: a sensitive tool for characterizing the buried Si/SiO2 interface
Author :
Zhao, Xuejun ; Ioannou, Dimitris E.
Author_Institution :
Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA
fDate :
4/1/2001 12:00:00 AM
Abstract :
A “gated diode” technique is described for the measurement of the interface state density of the silicon film/buried oxide interface of SOI MOSFETs. This approach becomes possible by taking advantage of the front gate, which is biased to inversion (NMOSFET) or accumulation (BC-PMOSFET) during the measurement, while scanning the back interface through depletion. Using this technique the estimated value of the buried interface state density of typical low dose SIMOX MOSFETs was slightly over 1011/cm2
Keywords :
MOSFET; SIMOX; interface states; inversion layers; semiconductor device measurement; SOI MOSFETs; Si-SiO2; accumulation; back interface; gated-diode; interface state density; inversion; low dose SIMOX; semiconductor film/buried oxide interface; CMOS technology; Current measurement; Density measurement; Interface states; MOSFET circuits; Particle measurements; Semiconductor films; Silicon; State estimation; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
