• DocumentCode
    1465077
  • Title

    “Gated-diode” in SOI MOSFETs: a sensitive tool for characterizing the buried Si/SiO2 interface

  • Author

    Zhao, Xuejun ; Ioannou, Dimitris E.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA
  • Volume
    48
  • Issue
    4
  • fYear
    2001
  • fDate
    4/1/2001 12:00:00 AM
  • Firstpage
    685
  • Lastpage
    687
  • Abstract
    A “gated diode” technique is described for the measurement of the interface state density of the silicon film/buried oxide interface of SOI MOSFETs. This approach becomes possible by taking advantage of the front gate, which is biased to inversion (NMOSFET) or accumulation (BC-PMOSFET) during the measurement, while scanning the back interface through depletion. Using this technique the estimated value of the buried interface state density of typical low dose SIMOX MOSFETs was slightly over 1011/cm2
  • Keywords
    MOSFET; SIMOX; interface states; inversion layers; semiconductor device measurement; SOI MOSFETs; Si-SiO2; accumulation; back interface; gated-diode; interface state density; inversion; low dose SIMOX; semiconductor film/buried oxide interface; CMOS technology; Current measurement; Density measurement; Interface states; MOSFET circuits; Particle measurements; Semiconductor films; Silicon; State estimation; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.915689
  • Filename
    915689
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1465077