DocumentCode
1465163
Title
Parametric Diodes ¿ Design and Fabrication
Author
Day, D.B.
Author_Institution
General Electric Co. Ltd., Semiconductor Division, Stockport, UK
Volume
21
Issue
3
fYear
1961
fDate
3/1/1961 12:00:00 AM
Firstpage
283
Lastpage
286
Abstract
Solid state diffusion into silicon can be used to produce a rectifying junction. The capacitance of a diode made this way varies with the bias applied to it. The device is designed to be a variable capacitance having a low loss. The unbiased capacitance of a diode depends on the starting material and the diffusion parameters but to reduce the value to one that is useful (a few pF) the area has to be limited. A small area of the junction is isolated by ultrasonic cutting, leaving a plinth or ¿mesa¿. Contact to the mesa is made in an encapsulation suitable for use in a wave-guide. Amongst other uses, the diodes are suitable for low-noise (para metric) amplifiers, frequency multipliers and high-frequency switches.
Keywords
parametric amplifiers; semiconductor diodes;
fLanguage
English
Journal_Title
Radio Engineers, Journal of the British Institution of
Publisher
iet
Type
jour
DOI
10.1049/jbire.1961.0036
Filename
5261259
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