DocumentCode :
1465163
Title :
Parametric Diodes ¿ Design and Fabrication
Author :
Day, D.B.
Author_Institution :
General Electric Co. Ltd., Semiconductor Division, Stockport, UK
Volume :
21
Issue :
3
fYear :
1961
fDate :
3/1/1961 12:00:00 AM
Firstpage :
283
Lastpage :
286
Abstract :
Solid state diffusion into silicon can be used to produce a rectifying junction. The capacitance of a diode made this way varies with the bias applied to it. The device is designed to be a variable capacitance having a low loss. The unbiased capacitance of a diode depends on the starting material and the diffusion parameters but to reduce the value to one that is useful (a few pF) the area has to be limited. A small area of the junction is isolated by ultrasonic cutting, leaving a plinth or ¿mesa¿. Contact to the mesa is made in an encapsulation suitable for use in a wave-guide. Amongst other uses, the diodes are suitable for low-noise (para metric) amplifiers, frequency multipliers and high-frequency switches.
Keywords :
parametric amplifiers; semiconductor diodes;
fLanguage :
English
Journal_Title :
Radio Engineers, Journal of the British Institution of
Publisher :
iet
Type :
jour
DOI :
10.1049/jbire.1961.0036
Filename :
5261259
Link To Document :
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