• DocumentCode
    1465163
  • Title

    Parametric Diodes ¿ Design and Fabrication

  • Author

    Day, D.B.

  • Author_Institution
    General Electric Co. Ltd., Semiconductor Division, Stockport, UK
  • Volume
    21
  • Issue
    3
  • fYear
    1961
  • fDate
    3/1/1961 12:00:00 AM
  • Firstpage
    283
  • Lastpage
    286
  • Abstract
    Solid state diffusion into silicon can be used to produce a rectifying junction. The capacitance of a diode made this way varies with the bias applied to it. The device is designed to be a variable capacitance having a low loss. The unbiased capacitance of a diode depends on the starting material and the diffusion parameters but to reduce the value to one that is useful (a few pF) the area has to be limited. A small area of the junction is isolated by ultrasonic cutting, leaving a plinth or ¿mesa¿. Contact to the mesa is made in an encapsulation suitable for use in a wave-guide. Amongst other uses, the diodes are suitable for low-noise (para metric) amplifiers, frequency multipliers and high-frequency switches.
  • Keywords
    parametric amplifiers; semiconductor diodes;
  • fLanguage
    English
  • Journal_Title
    Radio Engineers, Journal of the British Institution of
  • Publisher
    iet
  • Type

    jour

  • DOI
    10.1049/jbire.1961.0036
  • Filename
    5261259