Realization of Unidirectional Planar GaAs Nanowires on GaAs (110) Substrates

Author

Dowdy, Ryan ; Walko, Donald A. ; Fortuna, Seth A. ; Li, Xiuling

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA

Volume

33

Issue

4

fYear

2012

fDate

4/1/2012 12:00:00 AM

Firstpage

522

Lastpage

524

Abstract

A self-aligned unidirectional planar GaAs nanowire (NW) array is realized by growing on (110) GaAs substrates through the Au-catalyzed vapor-liquid-solid mechanism. All NWs on (110) substrates propagate along the [00-1] direction, yielding planar NWs with trapezoidal cross sections where the top surface and sidewalls are identified by micro X-ray diffraction analysis to be [110], [010], and [100] facets, respectively. Depletion-mode long-channel metal-semiconductor field-effect transistors using these [00-1] GaAs NWs as channels exhibit well-defined dc output and transfer characteristics, confirming the high material quality of the NWs. Completely ordered site controlled arrays of planar NWs are demonstrated by growing on (110) substrates with Au catalyst nanoparticles patterned using electron beam lithography.

Keywords

electron beam lithography; gallium arsenide; GaAs; depletion-mode long-channel metal-semiconductor field effect transistors; electron beam lithography; micro X-ray diffraction analysis; substrates; trapezoidal cross section; unidirectional planar nanowire array; vapor-liquid-solid mechanism; Arrays; Gallium arsenide; Gold; MESFETs; Nanoparticles; Nanowires; Substrates; GaAs; metal–semiconductor field-effect transistor (MESFET); nanowire (NW); nanowire array;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2186115

Filename

6165635