DocumentCode :
1465209
Title :
Characteristics of IGZO TFT Prepared by Atmospheric Pressure Plasma Jet Using PE-ALD 
Gate Dielectric
Author :
Wu, Chien-Hung ; Chang, Kow-Ming ; Huang, Sung-Hung ; Deng, I-Chung ; Wu, Chin-Jyi ; Chiang, Wei-Han ; Chang, Chia-Chiang
Author_Institution :
Dept. of Electron. Eng., Chung Hua Univ., Hsinchu, Taiwan
Volume :
33
Issue :
4
fYear :
2012
fDate :
4/1/2012 12:00:00 AM
Firstpage :
552
Lastpage :
554
Abstract :
This letter proposes a novel atmospheric pressure plasma jet (APPJ) method for indium-gallium-zinc-oxide (IGZO) deposition and use of the plasma-enhanced atomic layer deposition (PE-ALD) Al2O3 as gate dielectric. A nonvacuum and simple APPJ system was demonstrated for channel material deposition. High-transmittance nanocrystalline IGZO thin films were obtained. Excellent electrical characteristics were achieved, including a low VT of 0.71 V, a small subthreshold swing of 276 mV/dec, a mobility of 8.39 cm2/(V·s), and a large Ion/Ioff ratio of 1 ×108.
Keywords :
II-VI semiconductors; atmospheric pressure; atomic layer deposition; carrier mobility; dielectric materials; gallium compounds; indium compounds; nanostructured materials; plasma jets; thin film transistors; wide band gap semiconductors; APPJ system; IGZO TFT characteristics; InGaZnO; PE-ALD gate dielectric; atmospheric pressure plasma jet; carrier mobility; channel material deposition; high-transmittance nanocrystalline thin films; indium gallium zinc oxide deposition; nonvacuum system; plasma-enhanced atomic layer deposition; subthreshold swing; Aluminum oxide; Dielectrics; Logic gates; Plasmas; Thin film transistors; $hbox{Al}_{2}hbox{O}_{3}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2185774
Filename :
6165637
Link To Document :
