Title :
Operation Voltage Control in Complementary Resistive Switches Using Heterodevice
Author :
Lee, Daeseok ; Park, Jubong ; Jung, Seungjae ; Choi, Godeuni ; Lee, Joonmyoung ; Kim, Seonghyun ; Woo, Jiyong ; Siddik, Manzar ; Cha, Eujun ; Hwang, Hyunsang
Author_Institution :
Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
fDate :
4/1/2012 12:00:00 AM
Abstract :
For the high-density memory application of resistive random access memory (ReRAM), we study the complementary resistive switch (CRS) behavior of a HfOx-based ReRAM with a TiOx-based ReRAM. To control the operation voltages of the CRS device, we used ReRAMs having asymmetric set and reset voltages. Consequently, we achieved a wider voltage window for the read process, high switch speed, high reliability, and more than ten times readout margin from the heterodevice CRS.
Keywords :
random-access storage; voltage control; heterodevice complementary resistive switches; high density memory application; high reliability; high switch speed; operation voltage control; read process; resistive random access memory; wider voltage window; Arrays; Hafnium compounds; Reliability; Resistors; Switches; Voltage control; Writing; Complementary resistive switches (CRSs); RRAM; cross-point array; nonvolatile memory; resistive memory;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2186113
