Title :
Monolithic Integration of a Semiconductor Optical Amplifier and a High-Speed Photodiode With Low Polarization Dependence Loss
Author :
Caillaud, Christophe ; Glastre, Genevieve ; Lelarge, Francois ; Brenot, Romain ; Bellini, Sarah ; Paret, Jean-François ; Drisse, Olivier ; Carpentier, Daniele ; Achouche, Mohand
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis, France
fDate :
6/1/2012 12:00:00 AM
Abstract :
We demonstrate the monolithic integration of a buried heterostructure semiconductor optical amplifier (SOA) and a deep ridge PIN photodiode for high-speed on-off keying links at 1.55 μm. The structure allows separate optimization of the SOA and the photodiode. The integrated receiver presents simultaneously a peak responsivity of 88 A/W with a low polarization dependence loss (<; 1 dB), a low noise figure (8.5 dB), and a wide 3-dB electrical bandwidth (≈ 50 GHz). This corresponds to a very large gain-bandwidth product of 3.5 THz. To our knowledge, this is the first time that a monolithically integrated SOA-PIN receiver has achieved such performances.
Keywords :
amplitude shift keying; integrated optics; laser noise; light polarisation; optical losses; optical receivers; p-i-n photodiodes; semiconductor optical amplifiers; SOA; SOA-PIN receiver; bandwidth 3.5 THz; buried heterostructure semiconductor optical amplifier; deep ridge PIN photodiode; electrical bandwidth; high-speed on-off keying; high-speed photodiode; integrated receiver; large gain-bandwidth product; low polarization dependence loss; monolithic integration; noise figure; noise figure 8.5 dB; wavelength 1.55 mum; Bandwidth; Optical fibers; Photodiodes; Receivers; Semiconductor optical amplifiers; Sensitivity; High-speed photodetector; monolithic integration; optical preamplification; semiconductor optical amplifier;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2012.2190275
