Title :
Overvoltage self-protection structure of a light-triggered thyristor
Author :
Katoh, Shuji ; Yamazumi, Saigo ; Watanabe, Atsuo ; Amemiya, Kensuke
Author_Institution :
Hitachi Ltd., Ibaraki, Japan
fDate :
4/1/2001 12:00:00 AM
Abstract :
Overvoltage self-protection with a slight temperature dependence on triggering temperature was realized for a light-triggered thyristor. This thyristor had a narrow, low concentration p layer in the light-triggered region. This low concentration area was formed by ion implantation. The thyristor was triggered when the depletion layer extended to near the n-emitter. The triggering voltage could be controlled by the ion implantation dose
Keywords :
ion implantation; overvoltage protection; photothyristors; depletion layer; ion implantation dose; light-triggered thyristor; low concentration p layer; overvoltage self-protection structure; temperature dependence; triggering temperature; triggering voltage; Avalanche breakdown; Electric potential; Ion implantation; Leakage current; Power semiconductor devices; Protection; Resistors; Temperature dependence; Thyristors; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
