Metal-induced laterally crystallized polycrystalline silicon for integrated sensor applications

Author

Wang, Mingxiang ; Meng, Zhiguo ; Zohar, Yitshak ; Wong, Man

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

48

Issue

4

fYear

2001

fDate

4/1/2001 12:00:00 AM

Firstpage

794

Lastpage

800

Abstract

A novel metal-induced lateral crystallization (MILC) technique, involving a low temperature crystallization step followed by a high temperature recrystallization step, has been applied to the formation of polycrystalline silicon (poly-Si) with enhanced material characteristics. A range of devices, including piezo-resistors, thermistors, resistors and thin-film transistors, has been fabricated both on MILC and regular low-pressure chemical vapor deposited (LPCVD) poly-Si. Compared to the latter, MILC poly-Si leads to much improved device performance. The piezo-resistive gauge factor of MILC poly-Si is at least double that of LPCVD poly-Si, with a maximum value of 60 measured, higher mobility, steeper subthreshold slope, lower threshold voltage, and higher on-off current ratio have been obtained for thin-film transistors realized on MILC poly-Si that those realized on LPCVD poly-Si. A variety of sensing and electronic devices based on MILC poly-Si can be simultaneously realized, thus making MILC an enabling technology for integrated silicon sensor applications

Keywords

crystallisation; electric sensing devices; elemental semiconductors; piezoresistive devices; semiconductor technology; silicon; thermistors; thin film resistors; thin film transistors; Ni; Si; high temperature recrystallization step; integrated Si sensor applications; laterally crystallized poly-Si; low temperature crystallization step; metal-induced laterally crystallized polysilicon; mobility; on-off current ratio; piezo-resistive gauge factor; piezoresistors; polycrystalline Si; resistors; subthreshold slope; thermistors; thin-film transistors; threshold voltage; Chemicals; Crystalline materials; Crystallization; Current measurement; Inorganic materials; Resistors; Silicon; Temperature; Thermistors; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.915728

Filename

915728