Title :
Noise modeling and characterization for 1.5-V 1.8-GHz SOI low-noise amplifier
Author :
Jin, Wei ; Liu, Weidong ; Hai, Chaohe ; Chan, Philip C.H. ; Hu, Chenming
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, China
fDate :
4/1/2001 12:00:00 AM
Abstract :
SOI technology is a promising candidate for radio-frequency and microwave applications. In this work, SOI low-noise amplifiers (LNA) operating at 1.8-GHz under 1.5-V power supply are reported for the first time and the high-frequency noise characteristics are studied. A physical SOI thermal noise model is applied, and all the major noise sources associated with the transistors are modeled. SPICE simulation results of the circuit noise agree well with the measurement data. An LNA composed of floating-body SOI devices offers better performance than that with body-tied devices
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; equivalent circuits; integrated circuit modelling; integrated circuit noise; semiconductor device models; semiconductor device noise; silicon-on-insulator; thermal noise; 1.5 V; 1.8 GHz; HF noise characteristics; RFIC; SOI LNA; SOI MOSFET; SOI low-noise amplifier; SPICE simulation; Si; floating-body SOI devices; noise characterization; noise modeling; noise sources; physical SOI thermal noise model; transistors; Circuit noise; Circuit simulation; Integrated circuit noise; Low-noise amplifiers; Noise figure; Noise measurement; Power supplies; Radio frequency; Radiofrequency integrated circuits; SPICE;
Journal_Title :
Electron Devices, IEEE Transactions on
