New approach for defining the threshold voltage of MOSFETs

Author

Salcedo, J.A. ; Ortiz-Conde, A. ; Sánchez, F. J García ; Muci, J. ; Liou, J.J. ; Yue, Y.

Author_Institution

Dept. of Electron., Univ. Simon Bolivar, Caracas, Venezuela

Volume

48

Issue

4

fYear

2001

fDate

4/1/2001 12:00:00 AM

Firstpage

809

Lastpage

813

Abstract

The threshold voltage of MOSFETs has traditionally been defined as the gate voltage required to cause the surface potential to be equal to twice the Fermi potential in the bulk of semiconductor. Such a definition, although widely used for modeling long-channel MOSFET´s, becomes increasingly questionable for modern devices with diminishing channel lengths. In this paper a new approach is proposed which defines the threshold voltage based on the intersection of the two asymptotes of the surface potential for the depletion and strong inversion regions. The approach is tested in a simulation environment for MOS devices having different channel lengths, oxide thicknesses, and substrate doping concentrations

Keywords

MOSFET; electric potential; inversion layers; semiconductor device models; MOSFET threshold voltage; channel length; depletion region; long-channel MOSFETs; modeling; oxide thickness; short-channel MOSFETs; simulation environment; strong inversion region; substrate doping concentration; surface potential; Capacitance; Charge carrier processes; Doping; MOS devices; MOSFETs; Semiconductor process modeling; Substrates; Testing; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.915731

Filename

915731