Title :
Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: a comparison study
Author :
Chen, Zhi ; Cheng, Kangguo ; Lee, Jinju ; Lyding, Joseph W. ; Hess, Karl ; Chetlur, Sundar
Author_Institution :
Dept. of Electr. Eng., Kentucky Univ., Lexington, KY, USA
fDate :
4/1/2001 12:00:00 AM
Abstract :
Several new phenomena are observed comparing the AC stress with the DC stress. In the initial stress period (<30 s), the deuterium isotope effect is smaller for AC stress than for DC stress, which is ascribed to the hole injection. In the final stress stage (>104 s), the saturation of the Gm degradation stops and the Gm degradation starts to increase again for AC stress, which is probably due to the hole trapping
Keywords :
MOSFET; deuterium; hole traps; hot carriers; semiconductor device reliability; AC hot-carrier degradation; AC stress; CMOSFET; DC hot-carrier degradation; DC stress; Gm degradation; MOS transistors; MOSFETs; NMOSFET; deuterium isotope effect; hole injection; hole trapping; n-MOS devices; Circuit simulation; Degradation; Deuterium; Hot carrier effects; Hot carriers; Integrated circuit reliability; Isotopes; MOSFETs; Stress; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
