Title :
Light Extraction Enhancement of a GaN-Based Light-Emitting Diode Through Grating-Patterned Photoelectrochemical Surface Etching With Phase Mask Interferometry
Author :
Lin, Cheng-Hung ; Chen, Cheng-Yen ; Yeh, Dong-Ming ; Yang, Chih-Chung
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
5/1/2010 12:00:00 AM
Abstract :
The enhancement of light extraction by fabricating a surface grating structure around the mesa of a light-emitting diode (LED) with an approach combining photoelectrochemical (PEC) wet etching and phase mask interferometry is demonstrated. The PEC etching rate is controlled by the intensity of illuminating UV light, which is spatially modulated by the fringe pattern of phase mask interferometry, for forming the grating structure. Without affecting the resistance characteristics of the device, the diffraction of such a grating structure leads to LED output enhancement by > 43% on either the top or bottom side.
Keywords :
III-V semiconductors; diffraction gratings; etching; gallium compounds; light emitting diodes; wide band gap semiconductors; GaN; PEC etching rate; fringe pattern; grating-patterned photoelectrochemical surface etching; illuminating UV light; light extraction enhancement; light-emitting diode; phase mask interferometry; photoelectrochemical wet etching; resistance characteristics; surface grating structure; Diffraction; Dry etching; Gratings; Holography; Light emitting diodes; Mass production; Optical interferometry; Rough surfaces; Surface roughness; Wet etching; Light-emitting diode (LED); light extraction; photoelectrochemical (PEC) etching;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2010.2043093
