Title :
Novel nonalloyed thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts for the fabrication of GaAs MESFETs
Author :
Islam, M.S. ; McNally, Patrick J.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
fDate :
4/1/2001 12:00:00 AM
Abstract :
GaAs metal-semiconductor field-effect transistors (MESFETs) have been fabricated utilizing thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts for the first time. MESFETs with Pd/Ge ohmic contacts are fabricated for comparison. The thermal stability of the Pd/Sn, Pd/Ge and Pd/Sn/Au ohmic contacts is also presented
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; gold; ohmic contacts; palladium; semiconductor device metallisation; semiconductor-metal boundaries; thermal stability; tin; GaAs MESFETs; GaAs-Pd-Sn; GaAs-Pd-Sn-Au; Pd/Sn ohmic contacts; Pd/Sn/Au ohmic contacts; contact thermal stability; nonalloyed thermally stable ohmic contacts; Annealing; Fabrication; Gallium arsenide; Gold; MESFETs; Metallization; Ohmic contacts; Thermal stability; Tin; Transmission line measurements;
Journal_Title :
Electron Devices, IEEE Transactions on
