Title :
0.2-μm p/sup +/-n junction characteristics dependent on implantation and annealing processes
Author_Institution :
Hankuk Aviation Univ., South Korea
Abstract :
Junction depth, sheet resistance, dopant activation, and diode leakage current characteristics were measured to find out the optimal processing conditions for the formation of 0.2-μm p/sup +/-n junctions. Among the 2×10/sup 15/ cm/sup -2/ BF2 implanted crystalline, As or Ge preamorphized silicon, the crystalline and Ge preamorphized samples exhibit excellent characteristics. The thermal cycle of furnace anneal (FA) followed by rapid thermal anneal (RTA) shows better characteristics than furnace anneal, rapid thermal anneal, or rapid thermal anneal prior to furnace anneal.
Keywords :
amorphisation; annealing; ion implantation; leakage currents; p-n junctions; rapid thermal annealing; secondary ion mass spectra; semiconductor device measurement; semiconductor diodes; 0.2 mum; 1000 C; 850 C; BF/sub 2/ implantation; SIMS profiles; Si:As; Si:BF/sub 2/; Si:Ge; annealing processes; diode leakage current characteristics; dopant activation; furnace anneal; ion implantation; junction depth; optimal processing conditions; p/sup +/-n junction characteristics; preamorphization; rapid thermal anneal; shallow junctions; sheet resistance; thermal cycle; Boron; Crystallization; Diodes; Electrical resistance measurement; Furnaces; Rapid thermal annealing; Rapid thermal processing; Silicon; Temperature; Thickness measurement;
Journal_Title :
Electron Device Letters, IEEE
