The Multiscale Paradigm in Electronic Device Simulation

Author

Der Maur, Matthias Auf ; Penazzi, Gabriele ; Romano, Giuseppe ; Sacconi, Fabio ; Pecchia, Alessandro ; Carlo, Aldo Di

Author_Institution

Dept. of Electron. Eng., Univ. of Rome Tor Vergata, Rome, Italy

Volume

58

Issue

5

fYear

2011

fDate

5/1/2011 12:00:00 AM

Firstpage

1425

Lastpage

1432

Abstract

In this paper, we present a framework for the simulation of electronic devices based on a multiscale and multiphysics approach. A formal description is provided that includes both multiscale and multiphysics problems and which can be linked to already established multiscale methods. We present a set of simulations of an AlGaN/GaN nanocolumn based on a multiscale coupling between atomistic descriptions and continuous media models, illustrating the application of such a multiscale approach to electronic device simulation.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; nanoelectronics; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; continuous media models; electronic device simulation; multiscale approach; multiscale coupling; multiscale paradigm approach; nanocolumn simulation; Computational modeling; Couplings; Equations; Mathematical model; Nanoscale devices; Numerical models; Strain; Atomistic; device simulation; multiscale; quantum; technology computer-aided design (TCAD);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2114666

Filename

5724295