Title :
High-temperature characteristics of 1.3-μm InAsP-InAlGaAs ridge waveguide lasers
Author :
Yamada, M. ; Anan, T. ; Tokutome, K. ; Sugou, S.
Author_Institution :
Opto-electron. & High Frequency Device Res. Lab., NEC Corp., Tsukuba, Japan
Abstract :
High-temperature characteristics of InAsP-InAlGaAs strained multiquantum-well (MQW) lasers with a large conduction band discontinuity (/spl Delta/E/sub c/) are demonstrated. The InAsP-InAlGaAs MQW ridge waveguide lasers with narrow stripes exhibited a characteristic temperature as high as 143 K in the range from 25/spl deg/C to 85/spl deg/C. This material system is promising for developing a cooling-system-free 1.3-μm laser.
Keywords :
Debye temperature; III-V semiconductors; aluminium compounds; conduction bands; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; ridge waveguides; waveguide lasers; 1.3 mum; 143 K; 25 to 85 C; InAsP-InAlGaAs; InAsP-InAlGaAs MQW ridge waveguide lasers; InAsP-InAlGaAs ridge waveguide lasers; InAsP-InAlGaAs strained MQW lasers; characteristic temperature; cooling-system-free 1.3-/spl mu/m laser; high-temperature characteristics; large conduction band discontinuity; material system; narrow stripes; Gas lasers; Indium phosphide; Optical materials; Optical waveguides; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature distribution; Waveguide discontinuities; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
