DocumentCode :
1465986
Title :
Ellipsometry measurements on refractive index profiles of thin films
Author :
Ho, Jau ; Lee, Chung ; Lei, Tan
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
39
Issue :
4
fYear :
1990
fDate :
8/1/1990 12:00:00 AM
Firstpage :
642
Lastpage :
648
Abstract :
An ellipsometry technique for measuring the arbitrary refractive index profile of composite thin films is presented. The refractive index profile is obtained through a successive partitioning and computation process on measured data points with the aid of a φ0/T plot, which reduces errors. Analyses of the required number of data points in the partitioned sections, the errors caused by the inappropriate partitioning, and the cumulative errors are performed. A Δφ0/T plot is used to monitor the overall cumulative errors of the computation. Experimental examples using this technique to measure the refractive index profile of O-N-O and O-N composite thin films are included and results are compared with those obtained by Auger electron spectroscopy. It is shown that this method is sensitive enough to determine the refractive index profile to a resolution of 20 Å
Keywords :
VLSI; ellipsometry; insulating thin films; integrated circuit testing; refractive index measurement; 100 to 80 Å; IC testing; SiO2-Si3N4-SiO2; VLSI MoS; composite thin films; cumulative errors; ellipsometry; insulating thin films; partitioning; refractive index profiles; thin films; Dielectric thin films; Electrons; Ellipsometry; Error analysis; Monitoring; Refractive index; Spectroscopy; Surface waves; Transistors; Very large scale integration;
fLanguage :
English
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9456
Type :
jour
DOI :
10.1109/19.57248
Filename :
57248
Link To Document :
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