DocumentCode
1465998
Title
Bandstructure Engineering With a 2-D Patterned Quantum Well Superlattice
Author
Verma, Varun Boehm ; Dias, Neville L. ; Reddy, Uttam ; Bassett, Kevin P. ; Li, Xiuling ; Coleman, James J.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Volume
47
Issue
4
fYear
2011
fDate
4/1/2011 12:00:00 AM
Firstpage
417
Lastpage
423
Abstract
We present experimental results from an edge-emitting diode laser with an active layer consisting of a 2-D patterned quantum well superlattice. We demonstrate control over the density of optical transitions by engineering the unit cell geometry of the lattice.
Keywords
III-V semiconductors; band structure; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; semiconductor quantum wells; semiconductor superlattices; surface emitting lasers; 2D patterned quantum well superlattice; InGaAs; band structure engineering; edge-emitting diode laser; optical lattice; optical transitions; Gallium arsenide; Geometry; Indium gallium arsenide; Lattices; Potential energy; Superlattices; Coupled quantum dots; quantum dot; quantum dot laser; quantum dot molecule;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2010.2090134
Filename
5724801
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