مرکز منطقه ای اطلاع رساني علوم و فناوري - Effects of Plasma-<formula formulatype="inline"> <img src="/images/tex/20253.gif" alt="\\hbox {PH}_{3}"> </formula> Passivation on Mobility Degradation Mechanisms of <formula formulatype="inline"> <img src="/images/tex/19960.gif" alt="\\hbox {In}

Title :

Effects of Plasma- $\\hbox {PH}_{3}$ Passivation on Mobility Degradation Mechanisms of $\\hbox {In}_{0.53} \</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Suleiman, Sumarlina Azzah Bte ; Oh, Hoon-Jung ; Lee, Sungjoo</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>59</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>5</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2012</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fDate : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>5/1/2012 12:00:00 AM</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1377</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1384</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>In this paper, we investigated the inversion-layer scattering mechanisms of HfAlO In<sub>0.53</sub>Ga<sub>0.47</sub>As nMOSFETs with a plasma-PH<sub>3</sub> passivation layer to understand the physical origins of mobility enhancement compared with a nonpassivated device. It has been found in low <i>E</i><sub>eff</sub> that the mobility enhancement caused by the plasma- PH<sub>3</sub> passivation is due to the reduction in Coulomb scattering caused by reduction in <i>D</i><sub>it</sub> in the upper half of the band gap, as shown from the plasma-PH<sub>3</sub> reaction, which involves P-for-As exchange reaction that reduces the As vacancy sites. Plasma- PH<sub>3</sub> passivation also results in reduction of the phonon scattering caused by soft optical phonons in the HfAlO, which has weak temperature dependence. This is due to the thicker passivation layer of the plasma-PH<sub>3</sub> -passivated device compared with the interfacial layer present in the nonpassivated device. Plasma- PH<sub>3</sub> passivation also helps to reduce the interface dipole scattering caused by fluctuating dipoles at the HfAlO/ In<sub>0.53</sub>Ga<sub>0.47</sub>As interface, which may be attributed to the interdiffusion of elements from HfAlO and In<sub>0.53</sub>Ga<sub>0.47</sub>As . In addition, it is found that effective channel mobility is decreased as gate length reduces until sub-100 nm, due to increased effects of neutral scattering of charges near the source/drain as well as the effect of ballistic transport, thus possibly degrading mobility with further device scaling.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>III-V semiconductors; MOSFET; ballistic transport; gallium arsenide; hafnium compounds; indium compounds; passivation; reduction (chemical); HfAlO-In<sub>0.53</sub>Ga<sub>0.47</sub>As; ballistic transport effect; fluctuating dipoles; interface dipole scattering; mobility degradation mechanisms; mobility enhancement; nMOSFET; nonpassivated device; phonon scattering reduction; plasma-PH3 passivation layer; size 100 nm; High K dielectric materials; MOSFETs; Passivation; Phonons; Scattering; Substrates; Temperature measurement; <formula formulatype=$ $hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ metal–oxide–semiconductor field-effect transistor; mobility degradation mechanism; plasma-$hbox{PH}_{3}$ passivation;