Title :
Zero insertion loss operations in monolithically integrated WDM channel selectors
Author :
Ishii, H. ; Kohtoku, M. ; Shibata, Y. ; Oku, S. ; Kadota, Y. ; Yoshikuni, Y. ; Sanjoh, H. ; Kondo, Y. ; Kishi, K.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
Eight-channel wavelength-division-multiplexed (WDM) channel selectors were fabricated based on an monolithic integration of two arrayed-waveguide gratings and a semiconductor optical amplifier array on InP substrates. A compact device size of 5.2/spl times/3.6 mm/sup 2/ was achieved with a combination of deep-ridge waveguides and buried waveguides. The device can select an arbitrary signal from a WDM signal with a low crosstalk of less than -40 dB, and fiber-to-fiber zero insertion loss operations were also achieved.
Keywords :
III-V semiconductors; diffraction gratings; indium compounds; integrated optoelectronics; optical communication equipment; optical crosstalk; optical losses; optical planar waveguides; ridge waveguides; semiconductor laser arrays; semiconductor optical amplifiers; wavelength division multiplexing; 3.6 mm; 5.2 mm; InP; InP substrate; WDM signal; arbitrary signal; arrayed-waveguide gratings; buried waveguides; compact device size; deep-ridge waveguides; eight-channel WDM channel selectors; fiber-to-fiber zero insertion loss; low crosstalk; monolithic integration; monolithically integrated WDM channel selectors; semiconductor optical amplifier array; wavelength-division-multiplexed; zero insertion loss operations; Arrayed waveguide gratings; Indium phosphide; Insertion loss; Monolithic integrated circuits; Optical arrays; Optical losses; Optical waveguides; Semiconductor optical amplifiers; Semiconductor waveguides; Wavelength division multiplexing;
Journal_Title :
Photonics Technology Letters, IEEE
