37 GHz bandwidth InP-based photoreceiver OEIC suitable for data rates up to 50 Gb/s

Author

Mekonnen, G.G. ; Schlaak, W. ; Bach, H.-G. ; Steingrüber, R. ; Seeger, A. ; Enger, Th. ; Passenberg, W. ; Umbach, A. ; Schramm, C. ; Unterbörsch, G. ; Van Waasen, S.

Author_Institution

Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany

Volume

11

Issue

2

fYear

1999

Firstpage

257

Lastpage

259

Abstract

A photoreceiver optoelectronic integrated circuit based on InP with a bandwidth of 37 GHz is presented. The receiver consists of a 50 GHz waveguide-integrated photodiode and a distributed amplifier with a bandwidth of 39.5 GHz, which is composed of four high-electron mobility transistors. A system experiment at 40 Gb/s receiving an return-to-zero coded optical input signal is demonstrated, and a good quality of eye pattern is achieved.

Keywords

HEMT integrated circuits; III-V semiconductors; indium compounds; integrated optoelectronics; optical receivers; photodiodes; 37 GHz; 39.5 GHz; 40 Gbit/s; GHz bandwidth; GHz waveguide-integrated photodiode; InP; InP-based photoreceiver OEIC; data rates; distributed amplifier; eye pattern; good quality; high-electron mobility transistors; photoreceiver optoelectronic integrated circuit; return-to-zero coded optical input signal; system experiment; Bandwidth; Distributed amplifiers; HEMTs; Indium phosphide; MODFETs; Optical receivers; Optical waveguides; Optoelectronic devices; Photodiodes; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.740722

Filename

740722