Title :
Correction to “GaAs and InAs Nanowires for Ballistic Transport” [Jul/Aug 11 922-934]
Author :
Shtrikman, H. ; Popovitz-Biro, R. ; Kretinin, A. ; Kacman, P.
Author_Institution :
Braun Center for Submicron Res., Weizmann Inst. of Sci., Rehovot, Israel
Abstract :
This paper shows a correction of an error in paper "GaAs and InAs Nanowires for Ballistic Transport”. The correction is "closer look (top view SEM and cross-section TEM, not shown) exposes a hexagonal cross section with {1-100}-type facets", instead of {11-20}-type facets.
Keywords :
III-V semiconductors; ballistic transport; gallium arsenide; indium compounds; nanowires; scanning electron microscopy; transmission electron microscopy; GaAs; InAs; SEM; ballistic transport; cross-section TEM; hexagonal cross section; nanowires; Ballistic transport; Gallium arsenide; Nanowires; Scanning electron microscopy;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2011.2109290
