• DocumentCode
    1466165
  • Title

    Correction to “GaAs and InAs Nanowires for Ballistic Transport” [Jul/Aug 11 922-934]

  • Author

    Shtrikman, H. ; Popovitz-Biro, R. ; Kretinin, A. ; Kacman, P.

  • Author_Institution
    Braun Center for Submicron Res., Weizmann Inst. of Sci., Rehovot, Israel
  • Volume
    17
  • Issue
    6
  • fYear
    2011
  • Firstpage
    1797
  • Lastpage
    1797
  • Abstract
    This paper shows a correction of an error in paper "GaAs and InAs Nanowires for Ballistic Transport”. The correction is "closer look (top view SEM and cross-section TEM, not shown) exposes a hexagonal cross section with {1-100}-type facets", instead of {11-20}-type facets.
  • Keywords
    III-V semiconductors; ballistic transport; gallium arsenide; indium compounds; nanowires; scanning electron microscopy; transmission electron microscopy; GaAs; InAs; SEM; ballistic transport; cross-section TEM; hexagonal cross section; nanowires; Ballistic transport; Gallium arsenide; Nanowires; Scanning electron microscopy;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/JSTQE.2011.2109290
  • Filename
    5725157
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1466165