Engineering model of inversion channel mobility for 60-300 K temperature range

Describes the first engineering MOSFET effective-mobility model covering the temperature range 60-300 K which is important for low-temperature CMOS applications. The experimental data obtained using the split C/V method clearly demonstrate the deviations from the universal dependence of the effective mobility mu on the effective vertical field E_eff at low temperatures. The model presented in this letter is verified by comparison with experimental device characteristics and shows explicitly how the universal mu (E_eff) dependence emerges at the ambient temperature around 300 K.