Electron-phonon interaction within an unbiased and biased quantum well

Author

Lefebvre, Kevin R. ; Anwar, A.F.M.

Author_Institution

Dept. of Electr. & Syst. Eng., Connecticut Univ., Storrs, CT, USA

Volume

35

Issue

2

fYear

1999

fDate

2/1/1999 12:00:00 AM

Firstpage

216

Lastpage

220

Abstract

This paper addresses the electron-phonon interaction when a perpendicular electric field is applied across a quantum well (QW). An applied perpendicular electric field redistributes the one-dimensional density of states in position and energy within a QW. The redistribution of the one-dimensional density of states modifies the calculation of the initial and final states in the electron-phonon interaction. The overall result is to increase the scattering rate between the electrons and phonons while adding additional characteristics to the shape of the phonon scattering time

Keywords

electron-phonon interactions; electronic density of states; semiconductor quantum wells; 1D density of states; applied perpendicular electric field; biased quantum well; electron-phonon interaction; one-dimensional density; one-dimensional density of states; perpendicular electric field; phonon scattering time; scattering rate; unbiased quantum well; Absorption; Charge carrier processes; Dark current; Electrons; Optical scattering; Particle scattering; Phonons; Quantum well devices; Shape; Systems engineering and theory;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.740743

Filename

740743