• DocumentCode
    1466287
  • Title

    Design criteria for concentration optimization in scaling diode end-pumped lasers to high powers: influence of thermal fracture

  • Author

    Chen, Y.F.

  • Author_Institution
    Precision Instrum. Dev. Center, Nat. Sci. Council, Hsinchu, Taiwan
  • Volume
    35
  • Issue
    2
  • fYear
    1999
  • fDate
    2/1/1999 12:00:00 AM
  • Firstpage
    234
  • Lastpage
    239
  • Abstract
    A systematic investigation of a series of Nd:YVO4 crystals with different dopant concentrations is conducted to scale the performance of diode-end-pumped lasers to higher powers. From the theoretical analysis, the fracture-limited pump power is expressed as a function of the thermal shock parameter, fractional thermal loading, and the absorption coefficient. The thermal shock parameter of Nd:YVO4 crystals is determined from the laser experiments. Using the thermal shock parameter and the space-rate-equation model, we calculate the maximum output power in Nd:WO4 crystals at the optimum pump condition as a function of the dopant concentration. The theoretical calculations are in good agreement with the experimental results. The influence of lowering the absorption coefficient on the TEM 00 output efficiency is also studied through the overlapping integral
  • Keywords
    absorption coefficients; laser modes; neodymium; optical design techniques; optical pumping; optimisation; solid lasers; yttrium compounds; Nd:YVO4 crystal lasers; TEM00 output efficiency; YVO4:Nd; absorption coefficient; concentration optimization; design criteria; diode-end-pumped lasers; dopant concentration; fractional thermal loading; fracture-limited pump power; high powers; higher powers; laser experiments; maximum output power; optimum pump condition; overlapping integral; scaling diode end-pumped lasers; space-rate-equation model; thermal fracture; thermal shock parameter; Absorption; Crystals; Design optimization; Diodes; Electric shock; Laser modes; Laser theory; Power lasers; Pump lasers; Thermal loading;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.740746
  • Filename
    740746