• DocumentCode
    1466347
  • Title

    Disorder-induced buried-stripe optical waveguides in GaAs/AlGaAs MQW material

  • Author

    Weiss, B.L. ; Roberts, John

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK
  • Volume
    25
  • Issue
    10
  • fYear
    1989
  • fDate
    5/11/1989 12:00:00 AM
  • Firstpage
    653
  • Lastpage
    655
  • Abstract
    Buried-stripe optical waveguides have been fabricated in GaAs/AlGaAs multiquantum-well material by masked Si+ implantation followed by annealing at 750 degrees C to produce selective-area quantum well mixing. The waveguides were found to support both TE and TM modes with propagation losses of 33 and 56 dBcm-1, respectively, at a wavelength of 1.15 mu m.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; ion implantation; optical losses; optical waveguides; optical workshop techniques; semiconductor quantum wells; 1.15 micron; 750 degC; GaAs-AlGaAs:Si; III-V semiconductors; MQW material; TE mode; TM modes; annealing; buried-stripe; fabrication; integrated optics; masked Si + implantation; multiquantum-well material; optical waveguides; propagation losses; selective-area quantum well mixing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890442
  • Filename
    91746
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1466347