DocumentCode
1466372
Title
The heterojunction bipolar transistor an estimate of its potential for digital applications
Author
Hall, S. ; Eccleston, W.
Volume
57
Issue
1
fYear
1987
Abstract
The superior electrical properties of GaAs and its ability to produce heterojunctions which confine charge-carrier motion in specified directions, allows new design freedoms for bipolar transistors. This promises the realization of very fast, low power, high density integrated circuits.
fLanguage
English
Journal_Title
Electronic and Radio Engineers, Journal of the Institution of
Publisher
iet
ISSN
0267-1689
Type
jour
DOI
10.1049/jiere.1987.0010
Filename
5261513
Link To Document