DocumentCode
1466477
Title
High-Q bulk micromachined silicon cavity resonator at Ka-band
Author
Stickel, M. ; Eleftheriades, G.V. ; Kremer, P.
Author_Institution
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Volume
37
Issue
7
fYear
2001
fDate
3/29/2001 12:00:00 AM
Firstpage
433
Lastpage
435
Abstract
A novel bulk silicon micromachining technique for fabricating millimetre-wave waveguide components is presented. This technique enables the formation of deep three-dimensional stacked structures of almost constant cross-section as well as post wafer-bonding metallisation that reduces the effects of air gaps and contact resistances. With these innovations it is possible to realise high-Q devices with low-cost fabrication. Simulated and measured results for a 30 GHz silicon cavity resonator are presented
Keywords
Q-factor; cavity resonators; micromachining; millimetre wave devices; silicon; 30 GHz; EHF; Ka-band resonator; MM-wave waveguide component fabrication; Si; bulk Si micromachining technique; bulk micromachined Si cavity resonator; constant cross-section; deep 3D stacked structures; high-Q cavity resonator; low-cost fabrication; millimetre-wave waveguide components; post wafer-bonding metallisation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20010313
Filename
917476
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