Title :
The design of p-i-n-bipolar transimpedance pre-amplifiers for optical receivers
Author :
Sibley, M.J.N. ; Unwin, R.T. ; Smith, D.R.
fDate :
3/1/1985 12:00:00 AM
Abstract :
The factors limiting speed, sensitivity and dynamic range in p-i-n-b.j.t. transimpedance pre-amplifiers for optical receivers are examined. It is shown that a common-collector front end design is the best input configuration if a wideband response with good sensitivity is required. Two low-cost discrete pre-amplifier designs suitable for 140 Mbit/s and 650 Mbit/s are presented, together with three monolithic integrated circuits. The i.c.s were used in 320 Mbit/s receivers and had typical sensitivities of ¿34.6 dBm and optical dynamic ranges of at least 18.4 dB. The effect of circuit parasitics and of reducing transistor geometry on the i.e. performance is examined.
Keywords :
bipolar integrated circuits; bipolar transistors; optical communication equipment; preamplifiers; receivers; 140 Mbit/s; 320 Mbit/s receivers; 650 Mbit/s; bipolar IC; bipolar junction transistor; circuit parasitics; common-collector front end; dynamic range; monolithic integrated circuits; optical receivers; p-i-n bipolar transimpedance preamplifiers; sensitivity; speed; transistor geometry; wideband response;
Journal_Title :
Electronic and Radio Engineers, Journal of the Institution of
DOI :
10.1049/jiere.1985.0035