Title :
Damage profile of He implantation in AlGaAs laser diode material detected by photoluminescence
Author :
Gramlich, S. ; Nebauer, E. ; Sebastian, J. ; Beister, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
fDate :
3/29/2001 12:00:00 AM
Abstract :
The extension of the damaged region in a GaAs/AlGaAs layer system after helium isolation implantation was investigated for different energies using the photoluminescence from GaAs quantum wells. It was found that the range of created defects is in good agreement with the results of TRIM simulations for vacancies
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; ion implantation; isolation technology; photoluminescence; quantum well lasers; vacancies (crystal); GaAs-AlGaAs:He; TRIM simulations; damage profile; isolation implantation; laser diode material; photoluminescence; quantum wells; vacancies;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010298
