DocumentCode
1466611
Title
Damage profile of He implantation in AlGaAs laser diode material detected by photoluminescence
Author
Gramlich, S. ; Nebauer, E. ; Sebastian, J. ; Beister, G.
Author_Institution
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
Volume
37
Issue
7
fYear
2001
fDate
3/29/2001 12:00:00 AM
Firstpage
463
Lastpage
464
Abstract
The extension of the damaged region in a GaAs/AlGaAs layer system after helium isolation implantation was investigated for different energies using the photoluminescence from GaAs quantum wells. It was found that the range of created defects is in good agreement with the results of TRIM simulations for vacancies
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; ion implantation; isolation technology; photoluminescence; quantum well lasers; vacancies (crystal); GaAs-AlGaAs:He; TRIM simulations; damage profile; isolation implantation; laser diode material; photoluminescence; quantum wells; vacancies;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20010298
Filename
917496
Link To Document