DocumentCode
1466618
Title
Electron g factor engineering in IlI-V semiconductors for quantum communications
Author
Kosaka, H. ; Kiselev, A.A. ; Baron, F.A. ; Kim, Ki Wook ; Yablonovitch, E.
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Volume
37
Issue
7
fYear
2001
fDate
3/29/2001 12:00:00 AM
Firstpage
464
Lastpage
465
Abstract
An entanglement-preserving photodetector converts photon polarisation to electron spin. Up and down spin must respond equally to oppositely polarised photons, creating a requirement for degenerate spin energies. ge≃0, for electrons. The authors present a plot of ge factor against lattice constant, analogous to bandgap against lattice constant, that can be used for g factor engineering of III-V alloys and quantum wells
Keywords
III-V semiconductors; electron spin; g-factor; lattice constants; photodetectors; semiconductor quantum wells; IlI-V semiconductors; electron g factor; electron spin; entanglement-preserving photodetector; lattice constant; photon polarisation; quantum wells;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20010314
Filename
917497
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