• DocumentCode
    1466625
  • Title

    Experimental observation of microwave oscillations produced by pulsed silicon carbide IMPATT diode

  • Author

    Vassilevski, K.V. ; Zorenko, A.V. ; Zekentes, K.

  • Author_Institution
    A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
  • Volume
    37
  • Issue
    7
  • fYear
    2001
  • fDate
    3/29/2001 12:00:00 AM
  • Firstpage
    466
  • Lastpage
    467
  • Abstract
    4H-SiC single drift p+-n-n+ IMPATT diodes have been fabricated and characterised. The diodes have avalanche breakdown voltages of ~290 V. Microwave oscillations appeared in X-band at a threshold current of 0.3 A. The maximum output power of 300 mW was measured at an input pulsed current of 0.35 A
  • Keywords
    IMPATT diodes; avalanche breakdown; impact ionisation; microwave oscillators; semiconductor materials; silicon compounds; 0.3 A; 290 V; 300 mW; SiC; X-band; avalanche breakdown voltages; input pulsed current; microwave oscillations; output power; pulsed IMPATT diode; single drift p+-n-n+ diodes; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010285
  • Filename
    917498
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1466625