Title :
Radiation Effects in Si-NW GAA FET and CMOS Inverter: A TCAD Simulation Study
Author :
Kaushal, Gaurav ; Rathod, S.S. ; Maheshwaram, Satish ; Manhas, S.K. ; Saxena, A.K. ; Dasgupta, S.
Author_Institution :
Dept. of Electron. & Comput. Eng., Indian Inst. of Technol. Roorkee, Roorkee, India
fDate :
5/1/2012 12:00:00 AM
Abstract :
In this brief, we have analyzed the response of silicon-nanowire (Si-NW) gate-all-around (GAA) field-effect transistor to total ionizing dose (TID) effects and assessed the impact of single-event effects (SEEs) in simple inverter circuit built from such devices. The analysis of radiation effects is carried out with 3-D technology computer-aided design simulations. Reliability of n-channel and p-channel Si-NW MOSFET is investigated for TID effects with gamma ray exposure. The transient effects at the device level are studied for alpha particle and heavy-ion strikes. It is found that Si-NW MOSFET is inherently hardened to TID effects. This result is in concordance with the earlier reported experimental results. However, we found that Si-NW CMOS inverter is not as tolerant to SEE, as Si-NW MOSFET is to TID. This study highlights the need for radiation-hardened Si-NW FET circuits against SEE.
Keywords :
CMOS integrated circuits; MOSFET; circuit simulation; elemental semiconductors; gamma-rays; invertors; nanowires; radiation hardening (electronics); semiconductor device reliability; silicon; technology CAD (electronics); transient analysis; 3D technology computer-aided design simulations; CMOS inverter; SEE; Si; TCAD simulation study; TID effects; alpha particle; gamma ray exposure; heavy-ion strikes; n-channel MOSFET reliability; p-channel MOSFET reliability; radiation effect analysis; radiation-hardened Si-NW FET circuits; silicon-nanowire GAA FET; silicon-nanowire gate-all-around field-effect transistor; single-event effects; total ionizing dose effects; transient effects; Alpha particles; CMOS integrated circuits; Integrated circuit modeling; Inverters; Logic gates; MOSFET circuits; Semiconductor device modeling; CMOS; radiation effects; silicon-nanowire (Si-NW) MOSFET; simulation; technology computer-aided design (TCAD);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2187656
