DocumentCode :
1466785
Title :
Hole-Injection-Type and Electron-Injection-Type Silicon Avalanche Photodiodes Fabricated by Standard 0.18- 
m CMOS Process
Author :
Iiyama, Koichi ; Takamatsu, Hideki ; Maruyama, Takeo
Author_Institution :
Sch. of Electr. & Comput. Eng., Kanazawa Univ., Kanazawa, Japan
Volume :
22
Issue :
12
fYear :
2010
fDate :
6/15/2010 12:00:00 AM
Firstpage :
932
Lastpage :
934
Abstract :
A hole-injection-type and an electron-injection-type Si avalanche photodiode (APD) were fabricated by a standard 0.18-μm complementary metal-oxide-semiconductor process. The avalanche amplifications are observed below 10 V of the bias voltage, and the maximum avalanche gains were 493 and 417 for the hole-injection-type and the electron-injection-type APDs, respectively. The maximum bandwidth is 3.4 GHz, and the gain-bandwidth products were 90 and 180 GHz for the hole-injection-type and the electron-injection-type APDs, respectively.
Keywords :
CMOS integrated circuits; avalanche photodiodes; elemental semiconductors; optical fabrication; silicon; Si; avalanche amplifications; avalanche gains; electron-injection-type silicon avalanche photodiodes; gain-bandwidth products; hole-injection-type silicon avalanche photodiodes; standard CMOS process; standard complementary metal-oxide-semiconductor process; Avalanche photodiode (APD); complementary metal–oxide–semiconductor (CMOS); photodiode (PD); silicon;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2047389
Filename :
5445009
Link To Document :
