DocumentCode
1466785
Title
Hole-Injection-Type and Electron-Injection-Type Silicon Avalanche Photodiodes Fabricated by Standard 0.18- 
m CMOS Process
Author
Iiyama, Koichi ; Takamatsu, Hideki ; Maruyama, Takeo
Author_Institution
Sch. of Electr. & Comput. Eng., Kanazawa Univ., Kanazawa, Japan
Volume
22
Issue
12
fYear
2010
fDate
6/15/2010 12:00:00 AM
Firstpage
932
Lastpage
934
Abstract
A hole-injection-type and an electron-injection-type Si avalanche photodiode (APD) were fabricated by a standard 0.18-μm complementary metal-oxide-semiconductor process. The avalanche amplifications are observed below 10 V of the bias voltage, and the maximum avalanche gains were 493 and 417 for the hole-injection-type and the electron-injection-type APDs, respectively. The maximum bandwidth is 3.4 GHz, and the gain-bandwidth products were 90 and 180 GHz for the hole-injection-type and the electron-injection-type APDs, respectively.
Keywords
CMOS integrated circuits; avalanche photodiodes; elemental semiconductors; optical fabrication; silicon; Si; avalanche amplifications; avalanche gains; electron-injection-type silicon avalanche photodiodes; gain-bandwidth products; hole-injection-type silicon avalanche photodiodes; standard CMOS process; standard complementary metal-oxide-semiconductor process; Avalanche photodiode (APD); complementary metal–oxide–semiconductor (CMOS); photodiode (PD); silicon;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2010.2047389
Filename
5445009
Link To Document