DocumentCode :
1467007
Title :
Going Nonlinear
Author :
Baylis, Charles ; Marks, Robert J., II ; Martin, Josh ; Miller, Hunter ; Moldovan, Matthew
Author_Institution :
Dept. of Electr. & Comput. Eng., Baylor Univ., Waco, TX, USA
Volume :
12
Issue :
2
fYear :
2011
fDate :
4/1/2011 12:00:00 AM
Firstpage :
55
Lastpage :
64
Abstract :
Since the advent of the nonlinear vector network analyzer (NVNA), microwave engineers have become familiar with new terminology regarding nonlinear network parameters such as "X-parameters" (registered trademark of Agilent Technologies), "S-functions", and "waveform engineering/the Cardiff model", as well as new types of equipment used to perform nonlinear characterizations. These nonlinear network parameter approaches have been developed by Root and Verspecht, Verbeyst and Vanden Bossche, and Tasker. Equipment is now commercially avail able to measure these parameters. To date, X-parameters and S-functions have been predominately used to describe amplifiers in system level simulations. Wave form engineering with the Cardiff model has focused on transistor-level amplifier design. Understanding these behavioral modeling approaches allows their application as an effective and time-saving tool for nonlinear power amplifier design. This article examines the X-parameters and S-functions in an effort to provide a working knowledge that will also apply to understanding the other aforementioned approaches.
Keywords :
microwave power amplifiers; network analysers; nonlinear network analysis; Agilent Technologies; Cardiff model; NVNA; S-functions; X-parameters; amplifiers; behavioral modeling; microwave engineers; nonlinear characterizations; nonlinear network parameters; nonlinear power amplifier design; nonlinear vector network analyzer; system level simulations; transistor-level amplifier design; waveform engineering; Current measurement; Frequency measurement; Harmonic analysis; Impedance measurement; Integrated circuit modeling; Load modeling; Nonlinear systems; Scattering parameters;
fLanguage :
English
Journal_Title :
Microwave Magazine, IEEE
Publisher :
ieee
ISSN :
1527-3342
Type :
jour
DOI :
10.1109/MMM.2010.940102
Filename :
5725552
Link To Document :
بازگشت