Title :
A model for gated-lateral BJTs based on standard MOSFET models
Author :
McKinnon, W.R. ; Ferguson, R. ; McAlister, S.P.
Author_Institution :
Device Phys. Group, Nat. Res. Council of Canada, Ottawa, Ont., Canada
fDate :
2/1/1999 12:00:00 AM
Abstract :
The Pao-Sah MOSFET equation is modified so that it applies when the source-body junction is forward biased. The modified equation can be separated into two components: (1) a MOSFET charge-sheet term and (2) a bipolar transistor term. The role of the two components in the variable gain of gated-lateral bipolar transistors (GL-BJT) is discussed
Keywords :
MOSFET; bipolar transistors; current density; semiconductor device models; MOSFET charge-sheet term; Pao-Sah MOSFET equation; bipolar transistor term; forward biased junction; gated-lateral BJT; source-body junction; variable gain; Bipolar transistors; Charge carrier processes; Current density; Electrons; Equations; Gain; Logic devices; MOSFET circuits; Semiconductor device modeling; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
