The role of polysilicon film in the suppression of bird´s beak in poly-buffered LOCOS

Author

Jang, Se-Aug ; Han, Chung-Soo ; Kim, Young-Bog ; Yeo, In-Seok

Author_Institution

Semicond. Adv. Res. Div., Hyundai Electron. Ind. Co. Ltd., Kyungki, South Korea

Volume

46

Issue

2

fYear

1999

fDate

2/1/1999 12:00:00 AM

Firstpage

433

Lastpage

436

Abstract

The oxidation behavior of buffer polysilicon and its contribution to the suppression of bird´s beak in the polybuffered local oxidation of silicon (PBL) isolation have been studied. Shorter bird´s beak in PBL than that in conventional LOCOS can be mainly attributed to the role of the buffer polysilicon, the oxidation of polysilicon is pinned near the LOGOS edge due to large compressive stress during field oxidation. The polysilicon-oxidation triangles caused by the oxidation pinning consume a large amount of laterally diffusing oxidants, thus leading to shorter bird´s beak. The geometrical analysis of polysilicon-oxidation triangles enables us to reasonably explain the observed 2ΔW trends with PBL parameters

Keywords

elemental semiconductors; isolation technology; oxidation; semiconductor thin films; silicon; Si; bird´s beak; oxidation; poly-buffered LOCOS isolation; polysilicon film; Biomedical electrodes; Current density; Hot carriers; Immune system; MOSFET circuits; Medical simulation; Semiconductor device manufacture; Solid modeling; Substrates; Testing;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.740914

Filename

740914