Title :
Ultrahigh-speed 1.55 mu m lambda /4-shifted DFB PIQ-BH lasers with bandwidth of 17 GHz
Author :
Uomi, K. ; Nakano, H. ; Chinone, N.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fDate :
5/11/1989 12:00:00 AM
Abstract :
Ultrahigh-speed 1.55 mu m lambda /4-shifted DFB PIQ-BH lasers with best-ever 17 GHz bandwidth as a DFB laser have been developed. This large bandwidth is attained by reducing the parasitic capacitance with a low doped p-InP buried layer and a PIQ (Hitachi Chemicals polyimide) layer, and by enhancing the relaxation oscillation frequency by optimisation of the waveguide structures.
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser transitions; optical communication equipment; optical waveguides; semiconductor junction lasers; 1.55 micron; 17 GHz; DFB laser; GaInAsP-InP; Hitachi Chemicals polyimide; PIQ-BH lasers; buried heterostructure; distributed feedback; lambda /4 shift laser; optical communication; optimisation; p-InP buried layer; parasitic capacitance reduction; relaxation oscillation frequency; semiconductor laser; ultrahigh speed operation; waveguide structures; wide bandwidth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890452
