• DocumentCode
    1467060
  • Title

    Ultrahigh-speed 1.55 mu m lambda /4-shifted DFB PIQ-BH lasers with bandwidth of 17 GHz

  • Author

    Uomi, K. ; Nakano, H. ; Chinone, N.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • Volume
    25
  • Issue
    10
  • fYear
    1989
  • fDate
    5/11/1989 12:00:00 AM
  • Firstpage
    668
  • Lastpage
    669
  • Abstract
    Ultrahigh-speed 1.55 mu m lambda /4-shifted DFB PIQ-BH lasers with best-ever 17 GHz bandwidth as a DFB laser have been developed. This large bandwidth is attained by reducing the parasitic capacitance with a low doped p-InP buried layer and a PIQ (Hitachi Chemicals polyimide) layer, and by enhancing the relaxation oscillation frequency by optimisation of the waveguide structures.
  • Keywords
    III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser transitions; optical communication equipment; optical waveguides; semiconductor junction lasers; 1.55 micron; 17 GHz; DFB laser; GaInAsP-InP; Hitachi Chemicals polyimide; PIQ-BH lasers; buried heterostructure; distributed feedback; lambda /4 shift laser; optical communication; optimisation; p-InP buried layer; parasitic capacitance reduction; relaxation oscillation frequency; semiconductor laser; ultrahigh speed operation; waveguide structures; wide bandwidth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890452
  • Filename
    91756