Static and dynamic latchup in the LIGBT

Author

Fossum, Jerry G. ; Kim, Yeong-Seuk

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

35

Issue

11

fYear

1988

fDate

11/1/1988 12:00:00 AM

Firstpage

1977

Lastpage

1985

Abstract

An insightful study of static and dynamic latchup in the LIGBT, based on extensive two-dimensional numerical device simulations, is described. The insight is then used as a basis for developing a physical SPICE LIGBT model, which is useful for device simulation and design (e.g. for latchup immunity) as well as for power integrated circuit simulation. The basic mechanisms underlying latchup in the LIGBT are identified for various excitations. The significance of the effective p-i-n diode that materializes via the conductivity modulation in the regenerative process is stressed in the simulations, as is the importance of non-quasi-static bipolar transistor behavior, heretofore unrecognized. the SPICE model is supported by measurements of test devices and by the numerical device simulations

Keywords

bipolar transistors; electronic engineering computing; insulated gate field effect transistors; power transistors; semiconductor device models; LIGBT; conductivity modulation; dynamic latchup; effective p-i-n diode; latchup immunity; lateral insulated gate bipolar transistor; nonquasistatic bipolar transistor behaviour; physical SPICE LIGBT model; power integrated circuit simulation; static latchup; two-dimensional numerical device simulations; Bipolar transistors; Circuit simulation; Conductivity measurement; Integrated circuit modeling; Materials testing; Numerical simulation; P-i-n diodes; Power integrated circuits; SPICE; Stress measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.7413

Filename

7413