Title :
30-ps 7.5-GHz GaAs MESFET macrocell array
Author :
Ino, Masayuki ; Togashi, Minoru ; Horiguchi, Shoji ; Hirayama, Masahiro ; Kataoka, Hideki
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
fDate :
10/1/1989 12:00:00 AM
Abstract :
An ECL-compatible GaAs 250-gate macrocell array has been successfully designed and fabricated using a three-level series gate low-power source-coupled FET logic (LSCFL) and a newly developed 0.4- mu m-gate self-aligned MESFET process. The unloaded propagation delay time was 30 ps/gate at a 2.4-mW/gate power dissipation. The loaded delay time with fan-out=3 and a 2-mm line length was as fast as 74 ps. The flip-flop toggle frequency was 7.5 GHz. A 2*2 asynchronous transfer mode (ATM) switch circuit was constructed on the macrocell array, and a maximum operation frequency of 2 GHz was achieved.
Keywords :
III-V semiconductors; emitter-coupled logic; field effect integrated circuits; gallium arsenide; integrated circuit technology; large scale integration; logic arrays; 0.4 micron; 2.4 mW; 30 ps; 7.5 GHz; ECL-compatible; GaAs; LSCFL; MESFET; asynchronous transfer mode; flip-flop toggle frequency; low-power source-coupled FET logic; macrocell array; operation frequency; power dissipation; propagation delay; self-aligned MESFET process; semiconductors; three-level series gate; Asynchronous transfer mode; FETs; Frequency; Gallium arsenide; Logic arrays; Logic design; MESFETs; Macrocell networks; Propagation delay; Switches;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1989.572592
